基于CIGS的太阳能电池

Cu( In , Ga)Se2 ( CIGS )由于其高效的潜力，是目前最成功的薄膜光伏技术。然而，为了在生产规模上重现实验室中创造的高效率，必须严格控制四元CIGS吸收器。典型的层状堆栈结构由钼、CIGS、缓冲层(如. CdS )、i - ZnO和顶部透明导电氧化物( TCO )。采用溅射法、共蒸发法和化学浴沉积法沉积薄膜。因为每一层都极大地影响了最终器件的质量，所以所有5个层的必须在窄的目标规格内生长。

对于CIGS应用，LayTec的计量系统可以24 / 7地无缝集成到生产线中。我们的Flames测量了所有层的反射率和膜厚。在线光致发光系统PearL确定CIGS吸收体的带隙，并监测具有高灵敏度的CIGS组成中的偏差。电涡流传感器EddY测量所有导电层的电导率。

LayTec公司的光谱光致发光( PL )系统Pear L是大批量太阳能电池生产中在线CIGS监测的理想工具。在生产条件下具有众多优点：

● 在整个模块长度的不同点上进行可靠的CIGS表征；

● 空间分辨的关于CIGS吸收层材料的带隙、材料组分和质量的信息；

● 直接对其沉积后的吸收体参数进行分析，不受其他层的干扰；

● 在成本密集型的后端处理之前，快速识别故障基板；

● 快速测量时间仅为0.1s

英文：

Cu(In,Ga)Se2 (CIGS) is currently the most successful thin-film photovoltaic technology because of its high efficiency potential. However, the quaternary CIGS absorber has to be controlled tightly to reproduce the high efficiencies created in labs on a production scale. The typical layer stack is comprised of molybdenum, CIGS, a buffer (e.g. CdS), i-ZnO and a transparent conducting oxide (TCO) on top. The layers are deposited by sputtering, co-evaporation, and chemical bath deposition. Because each layer dramatically influences the quality of the final device, all five  layers  must be grown within narrow target specs.

For CIGS applications, LayTec‘s metrology systems can be seamlessly integrated into production lines on a 24/7 basis. Our  Flames measures reflectance and film thickness on  all layers. The in-line photoluminescence system PearL determines the bandgap of the CIGS absorber and monitors derviations in the composition of CIGS with high sensititivity. The eddy-current sensor EddY measures conductivity of all conducting layers.

LayTec‘s spectroscopic photoluminescence (PL) system PearL is an ideal tool for in-line CIGS monitoring in high-volume solar cell production. It has numerous advantages under production conditions:

· reliable CIGS characterization across the full module length at different points;

· spatially resolved information about band gap, material composition and quality of the CIGS absorber material;

· analysis of the absorber parameters directly after its deposition without interference of other layers;

· fast identification of faulty substrates before the cost-intensive back-end processing;

· fast measurement time of only 0.1 s